Диод: импульсный; THT; 100В; 400мА; Ifsm: 4А; DO35; Ufmax: 1В; 4нс Технические параметры
- Capacitance: 4pF
- Case: DO35
- Diode type: switching
- Forward Voltage (Vf): 1V
- Leakage current: 50µA
- Load current: 400mA
- Manufacturer: ON SEMICONDUCTOR
- Max. forward impulse current: 4A
- Max. forward voltage: 1V
- Mounting: THT
- Mounting Type: Through Hole
- Off state voltage max.: 100V
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Outputs: 2
- Package Type: DO-35
- Packaging: Bulk
- Peak Average Forward Current (If(AV)): 300mA
- Peak Non-Repetitive Surge Current (Itsm): 4A
- Peak Reverse Current: 25nA
- Phases: Single
- Power Dissipation (Pd): 500mW
- Reverse recovery time: 4ns
- Reverse Recovery Time (trr): 4ns
- Reverse Repetitive Voltage Max. (Vrrm): 100V
- Semiconductor structure: single diode
- Thermal Resistance: 300Вт/градус
