100V 200mA High Conductance Fast Diode Технические параметры
- Capacitance: 4pF
- Forward Voltage (Vf): 1V
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Outputs: 2
- Package Type: DO-35
- Packaging: Tape & Reel
- Peak Average Forward Current (If(AV)): 300mA
- Peak Non-Repetitive Surge Current (Itsm): 4A
- Peak Reverse Current: 25nA
- Phases: Single
- Power Dissipation (Pd): 500mW
- Reverse Recovery Time (trr): 4ns
- Reverse Repetitive Voltage Max. (Vrrm): 100V
- Thermal Resistance: 300Вт/градус