Технические параметры
- Technology: TransZorb®
- Leakage current: 1µA
- Breakdown voltage: 190V
- #Promotion: vishay_201906
- Diode type: transil
- Kind of package: tape
- Off state voltage max.: 171V
- Semiconductor structure: unidirectional
- Max. forward impulse current: 1.1A
- Features of semiconductor devices: glass passivated
- Mounting: SMD
- Case: SMA
- Power dissipation: 400W