Технические параметры
- Load current: 310mA
- Reverse recovery time: 4ns
- Diode type: switching
- Kind of package: tape
- Max. forward voltage: 1.25V
- Off state voltage max.: 90V
- Semiconductor structure: double
- Max. forward impulse current: 4A
- Features of semiconductor devices: fast switching
- Mounting: SMD
- Case: DFN1010D-3
- Power dissipation: 540mW