Диод: защитный; Характеристики: защита ESD Технические параметры
- Breakdown voltage: 6.8V
- Case: QFN1610
- Diode type: transil
- Leakage current: 1.5µA
- Manufacturer: STM
- Max. forward impulse current: 120A
- Mounting: SMD
- Off state voltage max.: 5.5V
- Power dissipation: 1.4kW
- Semiconductor structure: unidirectional