Диод: защитный; Характеристики: защита ESD Технические параметры
- Breakdown voltage: 6.8V
- Case: QFN1610
- Diode type: transil
- Leakage current: 200nA
- Manufacturer: STM
- Max. forward impulse current: 60A
- Mounting: SMD
- Off state voltage max.: 5V
- Power dissipation: 700W
- Semiconductor structure: unidirectional