Технические параметры
- Load current: 2x 10A
- Leakage current: 200µA
- Reverse recovery time: 42ns
- Diode type: rectifying
- Kind of package: tube
- Radiator thickness: 1.14...1.4mm
- Max. forward voltage: 0.95V
- Off state voltage max.: 300V
- Semiconductor structure: double
- Max. forward impulse current: 120A
- Features of semiconductor devices: ultrafast switching
- Mounting: THT
- Case: TO220AB
- Capacitance: 30pF