Технические параметры
- Load current: 500mA
- Leakage current: 50µA
- Reverse recovery time: 4ns
- Diode type: rectifying
- Max. forward voltage: 1V
- Off state voltage max.: 100V
- Semiconductor structure: single diode
- Max. forward impulse current: 4A
- Mounting: THT
- Case: DO35
- Capacitance: 2pF
- Power dissipation: 500mW