Технические параметры
- Load current: 400mA
- Reverse recovery time: 50ns
- Diode type: switching
- Kind of package: tape
- Max. forward voltage: 1.1V
- Off state voltage max.: 325V
- Semiconductor structure: single diode
- Max. forward impulse current: 3A
- Features of semiconductor devices: high voltage
- Mounting: SMD
- Case: X1-DFN1006-2
- Capacitance: 5pF