Технические параметры
- Tolerance: ±5%
- Leakage current: 1µA
- Breakdown voltage: 350V
- Diode type: TVS
- Kind of package: tape
- Off state voltage max.: 300V
- Semiconductor structure: unidirectional
- Max. forward impulse current: 1.7A
- Mounting: SMD
- Case: DO214AA
- Power dissipation: 600W