Технические параметры
- Tolerance: ±5%
- Leakage current: 1µA
- Breakdown voltage: 510V
- Diode type: TVS
- Kind of package: tape
- Off state voltage max.: 434V
- Semiconductor structure: unidirectional
- Max. forward impulse current: 1.2A
- Features of semiconductor devices: glass passivated
- Mounting: THT
- Case: DO15
- Power dissipation: 600W