Диод: защитный; 350Вт; 32В; двунаправленная, двойной, общий катод Технические параметры
- Breakdown voltage: 32V
- Breakdown Voltage Max.: 32V
- Breakdown Voltage Min.: 26.2V
- Case: SOT23
- Clamping Voltage: 40V
- Diode type: защитный
- Direction Type: Bi-Directional
- Features of semiconductor devices: CAN bus protector
- Height Units: 3
- Housing: SOT23
- Manufacturer: ON SEMICONDUCTOR
- Mount: SMD
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Power Dissipation (Pd): 350W
- Reflow Temperature Max.: 260°C
- Reverse Stand-off Voltage Max.: 22V
- Ripple & Noise (%): -999
- Semiconductor structure: двунаправленная
- Voltage ESD Air Gap Max.: 30kV
- Voltage ESD Air Gap Min.: -30kV
- Voltage ESD Contact Max.: 30kV
- Voltage ESD Contact Min.: -30kV
- Мощность: 350W
