Технические параметры
- Power: 1.5 kW
- Leakage current: 10µA
- Breakdown voltage: 10 V
- Diode type: transil
- Off state voltage max.: 8.55 V
- Semiconductor structure: bidirectional
- Max. forward impulse current: 103 A
- Features of semiconductor devices: glass passivated
- Mounting: THT
- Case: DO201
- Package Type: roll