Технические параметры
- Breakdown voltage: 38.65V
- Case: SMB
- Diode type: transil
- Leakage current: 1µA
- Manufacturer: Bourns
- Max. forward impulse current: 11.3A
- Mounting: SMD
- Off state voltage max.: 33V
- Power dissipation: 600W
- Semiconductor structure: bidirectional
- Tolerance: ±5%
