Технические параметры
- Leakage current: 10µA
- Breakdown voltage: 6.5V
- Diode type: Transil array
- Number of channels: 4
- Off state voltage max.: 5V
- Semiconductor structure: common cathode
- Max. forward impulse current: 10A
- Mounting: SMD
- Case: SO8
- Power dissipation: 300W