Технические параметры
- Tolerance: ±5%
- Leakage current: 2µA
- Breakdown voltage: 32.8V
- Diode type: transil
- Kind of package: bulk
- Off state voltage max.: 28V
- Semiconductor structure: bidirectional
- Max. forward impulse current: 112.3A
- Features of semiconductor devices: glass passivated
- Mounting: THT
- Case: P600
- Power dissipation: 5kW