Технические параметры
- Leakage current: 0.1µA
- Breakdown voltage: 6...11V
- Diode type: TVS
- Kind of package: tape
- Off state voltage max.: 5V
- Semiconductor structure: bidirectional
- Max. forward impulse current: 1A
- Features of semiconductor devices: ESD protection
- Mounting: SMD
- Case: 0603
- Power dissipation: 100W