Технические параметры
- Leakage current: 50nA
- Breakdown voltage: 5V
- Diode type: TVS
- Kind of package: tape
- Number of channels: 1
- Off state voltage max.: 3.3V
- Features of semiconductor devices: ESD protection
- Mounting: SMD
- Case: X2DFN2
- Capacitance: 0.22...0.35pF
- Power dissipation: 250mW