Технические параметры
- Tolerance: ±5%
- Leakage current: 1µA
- Breakdown voltage: 130V
- Diode type: TVS
- Kind of package: tape
- Off state voltage max.: 111V
- Semiconductor structure: bidirectional
- Max. forward impulse current: 3.4A
- Mounting: SMD
- Case: DO214AA
- Power dissipation: 600W