Технические параметры
- Technology: TransZorb®
- Leakage current: 1µA
- Breakdown voltage: 171V
- Diode type: TVS
- Kind of package: tape
- Off state voltage max.: 154V
- Semiconductor structure: bidirectional
- Max. forward impulse current: 2.4A
- Features of semiconductor devices: glass passivated
- Mounting: SMD
- Case: SMB
- Power dissipation: 600W