Диод: защитный; 1,5кВт; 200В; 5,5А; двунаправленная; CB429 Технические параметры
- Breakdown voltage: 200V
- Breakdown Voltage Max.: 210V
- Breakdown Voltage Min.: 190V
- Capacitance: 675pF
- Case: CB429
- Clamping Voltage: 274V
- Diode type: защитный
- Direction Type: Bi-Directional
- Housing: CB429
- Leakage current: 1mA
- Manufacturer: STM
- Max. forward impulse current: 5.5A
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Off state voltage max.: 171V
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -65°C
- Outputs: 2
- Package Type: DO-201
- Packaging: Ammo Pack
- Peak Pulse Current: 5.5A
- Peak Pulse Power Dissipation: 1.5kW
- Reverse current: 1µA
- Reverse Leakage Current Max.: 1µA
- Reverse Stand-off Voltage Max.: 171V
- Semiconductor structure: двунаправленная
- Series: 1.5KE Series
- Мощность: 1.5kW
