Технические параметры
- Tolerance: ±5%
- Leakage current: 2mA
- Breakdown voltage: 6.45...7.14V
- Diode type: TVS
- Kind of package: Ammo Pack
- Off state voltage max.: 6.8V
- Semiconductor structure: bidirectional
- Max. forward impulse current: 143A
- Features of semiconductor devices: glass passivated
- Mounting: THT
- Case: DO201AE
- Power dissipation: 1.5kW