Технические параметры
- Technology: SiC
- Load current: 30A
- Leakage current: 600µA
- Diode type: Schottky rectifying
- Kind of package: tube
- Radiator thickness: max. 1.4mm
- Max. forward voltage: 2.4V
- Off state voltage max.: 650V
- Semiconductor structure: single diode
- Max. forward impulse current: 150A
- Mounting: THT
- Case: TO220-2
- Max. load current: 75A
- Power dissipation: 40W