Технические параметры
- Technology: SiC
- Load current: 4A
- Leakage current: 0.4µA
- Diode type: Schottky rectifying
- Kind of package: tape
- Max. forward voltage: 1.25V
- Off state voltage max.: 650V
- Semiconductor structure: single diode
- Max. forward impulse current: 23A
- Mounting: SMD
- Case: PG-HDSOP-10-1
- Power dissipation: 56W