Технические параметры
- Technology: SiC
- Load current: 2x 12.5A
- Diode type: Schottky rectifying
- Kind of package: tube
- Max. forward voltage: 2.2V
- Off state voltage max.: 1.2kV
- Semiconductor structure: double
- Max. forward impulse current: 750A
- Features of semiconductor devices: ultrafast switching
- Mounting: THT
- Case: ISO247™