Технические параметры
- Technology: SiC
- Load current: 2x 10A
- Diode type: Schottky rectifying
- Kind of package: tube
- Max. forward voltage: 1.8V
- Off state voltage max.: 650V
- Semiconductor structure: double
- Max. forward impulse current: 50A
- Mounting: THT
- Case: TO3PF
- Max. load current: 20A