Диодный мост: однофазный; Urmax: 800В; If: 2А; Ifsm: 65А; V: плоские Технические параметры
- Case: GBJ2
- Electrical mounting: THT
- Features of semiconductor devices: glass passivated
- Kind of package: tube
- Leads: flat pin
- Load current: 2A
- Max. forward impulse current: 65A
- Max. forward voltage: 1.1V
- Off state voltage max.: 800V
- Type of bridge rectifier: single-phase
- Version: flat