Транзистор: NPN; биполярный; 40В; 800мА; 350мВт; SOT23 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 2V
- Case: SOT23
- Collector current: 0.8A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1V
- Collector-Base Voltage (Vcbo): 75V
- Collector-emitter voltage: 40V
- Collector-Emitter Voltage (Vceo): 40V
- Contacts: 35
- Continuous Collector Current (Ic): 800mA
- Emitter-Base Voltage (Vebo): 6V
- Height Units: 3
- Housing: SOT23
- Kind of package: лента
- Manufacturer: ON SEMICONDUCTOR
- Mount: SMD
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 350mW
- Reflow Temperature Max.: 260°C
- Transistor type: NPN
- Transit Frequency: 300MHz
- Мощность: 350mW
- Напряжение коллектор-эмиттер: 40V
- Потери мощности: 350mW
