Транзистор: NPN; биполярный; RF; 4,1В; 50мА; 200мВт; SOT343 Технические параметры
- Case: SOT343
- Collector current: 50mA
- Collector-Base Voltage (Vcbo): 13V
- Collector-emitter voltage: 4.1V
- Collector-Emitter Voltage (Vceo): 4.1V
- Continuous Collector Current (Ic): 50mA
- Current gain: 110...270
- DC Current Gain (hFE): 180
- Emitter-Base Voltage (Vebo): 1.2V
- Frequency: 42GHz
- Height Units: 4
- Manufacturer: Infineon
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-343
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 200mW
- Power Dissipation (Pd): 200mW
- Ripple & Noise (%): -999
- Transistor kind: RF
- Transit Frequency: 42GHz
- Type of transistor: NPN
