Транзистор: NPN; биполярный; RF; 12В; 20мА; 175мВт; SOT23 Технические параметры
- Case: SOT23
- Collector current: 20mA
- Collector-Base Voltage (Vcbo): 20V
- Collector-emitter voltage: 12V
- Collector-Emitter Voltage (Vceo): 12V
- Continuous Collector Current (Ic): 20mA
- Current gain: 70...140
- Emitter-Base Voltage (Vebo): 2V
- Frequency: 8GHz
- Height Units: 3
- Manufacturer: Infineon
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 175mW
- Power Dissipation (Pd): 175mW
- Quantity: 100
- Ripple & Noise (%): -999
- Transistor kind: RF
- Transit Frequency: 8GHz
- Type of transistor: NPN
