Транзистор: NPN; биполярный; RF; 6В; 35мА; 210мВт; TSFP-3 Технические параметры
- Case: TSFP-3
- Collector current: 35mA
- Collector-Base Voltage (Vcbo): 15V
- Collector-emitter voltage: 6V
- Collector-Emitter Voltage (Vceo): 6V
- Continuous Collector Current (Ic): 35mA
- Current gain: 90...160
- Emitter-Base Voltage (Vebo): 2V
- Frequency: 14GHz
- Height Units: 3
- Manufacturer: Infineon
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Optical Sensor Output Type: NPN
- Package Type: TSFP
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 210mW
- Power Dissipation (Pd): 210mW
- Ripple & Noise (%): -999
- Sheets: 120
- Transistor kind: RF
- Transit Frequency: 14GHz
- Type of transistor: NPN