Транзистор: N-MOSFET; полевой; 400В; 1,25А; Idm: 8А; 30Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 1.25A
- Drain-source voltage: 400V
- Gate charge: 6нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 3.4Ω
- Polarisation: unipolar
- Power dissipation: 30W
- Pulsed drain current: 8A
- Type of transistor: N-MOSFET