Транзистор: P-MOSFET; полевой; -40В; -65А; 107Вт; DFN8 Технические параметры
- Application: automotive industry
- Case: DFN8
- Channel kind: enhanced
- Drain current: -65A
- Drain-source voltage: -40V
- Gate charge: 67нКл
- Gate-source voltage: ±16V
- Kind of package: tape
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 13mΩ
- Polarisation: unipolar
- Power dissipation: 107W
- Technology: PowerTrench®
- Type of transistor: P-MOSFET