Технические параметры
- Drain current: 5.7A
- Gate charge: 23nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 200V
- Pulsed drain current: 36A
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 280mΩ
- Power dissipation: 55W