Транзистор: N-MOSFET; полевой; 200В; 5,7А; Idm: 36А; 55Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 5.7A
- Drain-source voltage: 200V
- Gate charge: 23нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 280mΩ
- Polarisation: unipolar
- Power dissipation: 55W
- Pulsed drain current: 36A
- Type of transistor: N-MOSFET