Транзистор: N-MOSFET; полевой; 60В; 7А; Idm: 44А; 28Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 7A
- Drain-source voltage: 60V
- Gate charge: 6.4нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 145mΩ
- Polarisation: unipolar
- Power dissipation: 28W
- Pulsed drain current: 44A
- Type of transistor: N-MOSFET