Технические параметры
- Drain current: 7A
- Gate charge: 6.4nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Pulsed drain current: 44A
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 145mΩ
- Power dissipation: 28W