Технические параметры
- Drain current: 630mA
- Gate charge: 7.2nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 800V
- Pulsed drain current: 4A
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 20Ω
- Power dissipation: 45W