Транзистор: N-MOSFET; полевой; 900В; 1,08А; Idm: 6,8А; 50Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 1.08A
- Drain-source voltage: 900V
- Gate charge: 15нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 7.2Ω
- Polarisation: unipolar
- Power dissipation: 50W
- Pulsed drain current: 6.8A
- Type of transistor: N-MOSFET