Технические параметры
- Drain current: 1.08A
- Gate charge: 15nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 900V
- Pulsed drain current: 6.8A
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 7.2Ω
- Power dissipation: 50W