Транзистор: N-MOSFET; полевой; 500В; 1,64А; Idm: 10,4А; 45Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 1.64A
- Drain-source voltage: 500V
- Gate charge: 13нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 2.7Ω
- Polarisation: unipolar
- Power dissipation: 45W
- Pulsed drain current: 10.4A
- Type of transistor: N-MOSFET