Транзистор: N-MOSFET; полевой; 400В; 2,15А; Idm: 13,6А; 45Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 2.15A
- Drain-source voltage: 400V
- Gate charge: 13нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 1.6Ω
- Polarisation: unipolar
- Power dissipation: 45W
- Pulsed drain current: 13.6A
- Type of transistor: N-MOSFET