Технические параметры
- Drain current: 2.15A
- Gate charge: 13nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 400V
- Pulsed drain current: 13.6A
- Mounting: THT
- Case: IPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 1.6Ω
- Power dissipation: 45W