Транзистор: N-MOSFET; полевой; 500В; 2,4А; Idm: 16А; 48Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 2.4A
- Drain-source voltage: 500V
- Gate charge: 24нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 1.4Ω
- Polarisation: unipolar
- Power dissipation: 48W
- Pulsed drain current: 16A
- Type of transistor: N-MOSFET