Транзистор: N-MOSFET; полевой; 80В; 147А; Idm: 764А; 250Вт Технические параметры
- Case: PG-TO220-3
- Channel kind: enhanced
- Drain current: 147A
- Drain-source voltage: 80V
- Gate charge: 124нКл
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 1.9mΩ
- Polarisation: unipolar
- Power dissipation: 250W
- Pulsed drain current: 764A
- Technology: StrongIRFET™ 2
- Type of transistor: N-MOSFET