Транзистор: N-MOSFET; полевой; 700В; 4А; Idm: 8А; 80Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 4A
- Drain-source voltage: 700V
- Gate charge: 11.8нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 0.85Ω
- Polarisation: unipolar
- Power dissipation: 80W
- Pulsed drain current: 8A
- Type of transistor: N-MOSFET