Транзистор: N-MOSFET; полевой; 700В; 8А; Idm: 16А; 150Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 8A
- Drain-source voltage: 700V
- Gate charge: 12нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 500mΩ
- Polarisation: unipolar
- Power dissipation: 150W
- Pulsed drain current: 16A
- Type of transistor: N-MOSFET