Технические параметры
- Drain current: -3.8A
- Gate charge: 19nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8V
- Drain-source voltage: -20V
- Pulsed drain current: -20A
- Mounting: SMD
- Case: SOT23
- Type of transistor: P-MOSFET
- On-State Resistance: 68mΩ
- Power dissipation: 1.25W