Технические параметры
- Technology: TrenchFET®
- Application: automotive industry
- Drain current: 5.3A
- Gate charge: 43nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 40V
- Pulsed drain current: 32A
- Mounting: SMD
- Case: SO8
- Type of transistor: N-MOSFET x2
- On-State Resistance: 29mΩ
- Power dissipation: 1.3W