Транзистор: N-MOSFET; полевой; 1кВ; 28А; Idm: 112А; 690Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 28A
- Drain-source voltage: 1kV
- Gate charge: 186нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 350mΩ
- Polarisation: unipolar
- Power dissipation: 690W
- Pulsed drain current: 112A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET