Транзистор: N-MOSFET; полевой; 800В; 15А; Idm: 85А; 625Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 15A
- Drain-source voltage: 800V
- Gate charge: 150нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 430mΩ
- Polarisation: unipolar
- Power dissipation: 625W
- Pulsed drain current: 85A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET