Транзистор: N-MOSFET; полевой; 300В; 84А; Idm: 336А; 568Вт; TO264 Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 84A
- Drain-source voltage: 300V
- Gate charge: 115нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 36mΩ
- Polarisation: unipolar
- Power dissipation: 568W
- Pulsed drain current: 336A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET