Транзистор: N-MOSFET; полевой; 500В; 24А; Idm: 115А; 520Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 24A
- Drain-source voltage: 500V
- Gate charge: 145нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 150mΩ
- Polarisation: unipolar
- Power dissipation: 520W
- Pulsed drain current: 115A
- Technology: POWER MOS 8®
- Type of transistor: N-MOSFET