Транзистор: N-MOSFET; POWER MOS 5®; полевой; 400В; 28А; Idm: 112А Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 28A
- Drain-source voltage: 400V
- Gate charge: 160нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: THT
- On-State Resistance: 140mΩ
- Polarisation: unipolar
- Power dissipation: 300W
- Pulsed drain current: 112A
- Technology: POWER MOS 5®
- Type of transistor: N-MOSFET